2 Kbit Special Purpose Memory Module with Fault Protection - 1620РУ6УНИ for Reliable Data Storage

Integrated electronic circuits

512x4 digit capacity, 2.5 µm CMOS technology, Supply voltage from 4.5V to 7.5V, Read/write cycle, not less than 850 ns / 850 ns, Sampling time, not more than 300 ns, Current consumption in storage mode, not more than 8 mA, Dynamic current consumption, not pcs