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Custom Element Crystal Plate P-Type Transistor 2P7241A-5 for Power Management Applications

High-Power Semiconductors

Manufacturer:MICRON OJSC

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Bulk pricing available

FOB, CIF & EXW terms available

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Description

The P-type 2P7241A-5 transistor is manufactured using Trench MOSFET technology on 200 mm wafers. It is intended for use in battery power management systems and portable devices.

Specifications

Drain-to-source voltage

30 V

Operating temperature range

-50...150 °C

Drain-to-source breakdown voltage

30 V

drain-to-source leakage current

1 µA

Gate-source leakage current

+/-100 nA

Gate threshold voltage

1.725 V

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Shipping Terms

FOB Novorossiysk, RussiaCIF Available to major ports worldwideEXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C)Wire Transfer (T/T)Escrow Services

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Custom Element Crystal Plate P-Type Transistor 2P7241A-5 for Power Management Applications

Description

Specifications

Share your requirements for a quick response!