Available for ImportDual N-Channel Power MOSFET Transistor MIK8205 for Efficient Switching
Manufacturer:MICRON OJSC
Price:Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Available Models
Description
Twin N-channel power field-effect transistor, manufactured using Trench MOSFET technology on 200mm diameter wafers
Specifications
Drain-to-source voltage
20 V
Gate-source voltage
B1/B8 2100/900 MHz V
Operating temperature range
50...150 °C
Storage temperature range
50...150 °C
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Power Special Purpose Field Effect Transistors 2P7152A
View DetailsN-Channel MOSFET Transistor AnS140N06
View DetailsField-effect P-Channel Transistor 2P527A9
View DetailsPowerful NPN Amplifying Transistors Special Purpose 2T908A-2
View DetailsSilicon N-P-N Switching Transistor KT908A
View DetailsPower IGBT Module AnM75LCA12M
View DetailsHigh-Frequency Field Transistors for Special Applications 2P301B/IU
View DetailsPower Switches K3003KI014A
View DetailsPowerful NPN Transistor 2T808A for Special Applications
View DetailsN-channel MOSFET Transistor AnU12N10L
View DetailsPowerful Silicon Epitaxial-Planar n-p-n Switching Transistor KT879A
View DetailsP-N-P Silicon Transistor KT234V9
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions