High-Frequency GaN Transistor up to 6 GHz for Efficient Power Amplification

The microwave transistor with 3.5 mm periphery of 18 W power is manufactured by PN05D technology of Svetlana-Rost JSC. Main parameters: Frequency range: 0 - 6 GHz; Output power (P 3dB ): 18 W at 3 GHz; Gain in linear mode: 14 dB; Operating voltage: 28 - 45 V; Overall dimensions: 1090 x 950 x 100 µm. The transistor is supplied as a crystal. The source is commutated through metallised through-holes to the backside metallisation.