High-Frequency Impulse Transistors for Special Applications - 2T603B/IU
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High-Frequency Impulse Transistors for Special Applications 2T603B/IUAvailable for Import

High-Frequency Impulse Transistors for Special Applications 2T603B/IU

High-Power Transistors
Manufacturer:NPP Iskra OJSC
Price:Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

Available Models

Transistor KT117B (with full gold-plated leg)High-frequency pulse transistors of special purpose 2T603B/IU OSMHigh-frequency special-purpose field-effect transistors 2?305B/IUTransistor KT117A (with full gold-plated leg)Transistor 2T117G OSM

Description

Silicon epitaxial-planar n-p-n pulse high-frequency transistors in metal-glass case, designed for operation in circuits of special-purpose equipment.

Specifications

Collector reverse current
3.0E-6 A
Emitter reverse current
3.0E-6 A
Collector junction capacitance
1.5E-11
Emitter junction capacitance
4.0E-11
Time constant of the feedback circuit at high frequency
400
Static current transfer coefficient
Not less than 60, not more than 180
Collector-emitter saturation voltage
0.8 V
Base - emitter saturation voltage
1.5 V
Resorption time
70
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Shipping Terms

FOB Novorossiysk, RussiaCIF Available to major ports worldwideEXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C)Wire Transfer (T/T)Escrow Services

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