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High-Power GaN Microwave Transistor for Amplifier Applications PP9139A1

High-Power Transistors

Manufacturer:NIIET OJSC

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FOB, CIF & EXW terms available

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Description

Powerful microwave transistor based on gallium nitride for use in amplifier stages, L-, S- and C-band frequencies. Due to the small values of parasitic parameters has enhanced performance characteristics. It is intended for operation in power amplifiers.

Specifications

EFFICIENCY

SBVVBG %

Output power

SBVVBG W

Maximum voltage

130 V

Transistor weight

5 year

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Shipping Terms

FOB Novorossiysk, RussiaCIF Available to major ports worldwideEXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C)Wire Transfer (T/T)Escrow Services

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High-Power GaN Microwave Transistor for Amplifier Applications PP9139A1

Description

Specifications

Share your requirements for a quick response!