Available for Import
High-power high-voltage field-effect transistor KP829G9
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
RSI.open.= 0.05Ohm; USI max = 200B; UZI max = ±25V; IC max = 40A; Rmah=125W
Specifications
Assignment
for use in modern and advanced secondary power supply sources, in nodes and blocks of converters and in other equipment of wide application manufactured for the national economy
Type
powerful high-voltage
Model
KP829G9
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Bipolar Transistor 1NT251 for Switching Devices I93.456.000TU
View Details
High-Power High-Voltage Field Transistor KP829Zh
View Details
Miniature Silicon Epitaxial-Planar n-p-n Transistor 2T368A9/PC
View Details
N-Channel MOSFET Transistor An10N70S10
View Details
High Voltage N-P-N Switching Transistor KT8144A
View Details
High-Power High-Voltage Field Transistor KP829A
View Details
High-Power High-Voltage Field Transistor KP829B9
View Details
High-Power IGBT Module AnM150HBEВ12M
View Details
Power Module AnDM200EA12M - Efficient Energy Control
View Details
Powerful High-Voltage Field Transistor KP829B
View Details
Powerful NPN Switching Transistor 2T808A-2 for Special Applications
View Details
Powerful NPN Transistor 2T808A for Special Applications
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions