Available for ImportHigh-Power IGBT Module AnM150HBEВ12M for Energy Management Applications
Manufacturer:ANGSTREM OJSC
Price:Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM150HBEB12M
Specifications
Housing type
mpk-62
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
150 A
Recovery time
200
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Silicon Planar Transistor 2T117V OSH for Electronic Devices
View DetailsHigh Voltage Bipolar Power Transistor 2T8144VM1
View DetailsHigh Voltage N-P-N Silicon Planar Switching Transistor KT8121B2
View DetailsN-Channel MOSFET Transistor AnB12N20
View DetailsSilicon Epitaxial-Planar N-P-N Transistor 2T368A/PK
View DetailsHigh-Power DMOS Transistors 2P7246A-5
View DetailsPowerful Linear LDMOS Transistor KP9171A
View DetailsCompact N-Channel Field Transistor 2P526A9
View DetailsHigh Voltage N-P-N Switching Transistor KT8144A
View DetailsPower IGBT Module AnM600SSC12M
View DetailsHigh-Power High-Voltage Field Transistor KP829D
View DetailsPower Wrenches K3003KI014
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions