Available for Import
High-Power Special Purpose Field Effect Transistors 2P7152A for Electronics
Manufacturer:
NPP Iskra OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon high-current n-channel field-effect transistors in ceramic-metal insulated package, intended for use in radio-electronic equipment.
Specifications
Initial drain current
5.0E-6 A
Gate leakage current
1.0E-7 A
Drain-to-source resistance in open state
0.012 ohm
Threshold voltage gate - source
2...4 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful GaN-based Microwave Transistor PP9139B1
View Details
Power Module AnM200HBB12M for Industrial Applications
View Details
Powerful GaN Microwave Transistor for Amplification PP9137A
View Details
Powerful Linear LDMOS Transistor KP9171BS
View Details
Continuous Mode DMOS RF Transistor P - 2P979B, 230MHz
View Details
Power Module AnS150FRD065 for Industrial Applications
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9
View Details
High Voltage Bipolar Power Transistor 2T8144VM1
View Details
Powerful GaN-Based Microwave Transistor PP9170B
View Details
Compact N-Channel Field Transistor 2P526A9
View Details
High-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
View Details
AnDM100AD17M Power Module - Efficient Power Management
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions