Available for Import
Power IGBT module AnM100HBA17M from Russia
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM100HBA17M
Specifications
Housing type
mpk-34
Type of acceptance
QA
Maximum allowable voltage
1700 V
Maximum permissible current
100 A
Recovery time
180
Configuration type
half-bridge
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
High-Frequency p-n-p Transistor 2T3108A/PK
View DetailsP-N-P Silicon Transistor KT234V9
View DetailsHigh Voltage N-Channel DMOS Transistor KP7154BS
View DetailsPowerful Linear LDMOS Transistor KP9171A
View DetailsHigh-Power High-Voltage Field Transistor KP829D
View DetailsPower IGBT Module AnM100RCA065M
View DetailsPowerful N-Channel DMOP Transistors 2P7246A91
View DetailsSpecial Purpose Transistor Optocoupler 3OT123B9 OSH
View DetailsHigh Voltage Powerful N-Channel DMOS Transistor KP7154BS
View DetailsN-Channel MOSFET Transistor An10N70S10
View DetailsHigh Voltage Powerful N-Channel DMOS Transistors and Modules 2P829B9
View DetailsPower Module AnS150FRD065 for Industrial Applications
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions