Available for ImportAnDM150CD12M Power Module for Enhanced Performance in Industrial Applications
Manufacturer:ANGSTREM OJSC
Price:Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Seal module AnDM150CD12M
Specifications
Configuration type
half-bridge
Housing type
MPC-20
Maximum permissible current
150 A
Maximum allowable voltage
1200 V
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful GaN Microwave Transistor for Amplifier Applications PP9170E
View DetailsHigh-Power High-Voltage Field Transistor KP829A
View DetailsHigh-Voltage Bipolar Power Transistors 2T8143F1
View DetailsBipolar Transistor 1NT251 for Switching Devices I93.456.000TU
View DetailsPowerful GaN Microwave Transistor for Amplification PP9137A
View DetailsHigh-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
View DetailsNon-Hermetic Transistors and Diodes AnR30IGB065D
View DetailsHigh-Power DMOS Transistors 2P7242A-4
View DetailsHigh Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829J
View DetailsPowerful IGBT Module AnM450HBE12M for Efficient Energy Control
View DetailsMiniature Silicon Epitaxial-Planar n-p-n Transistor 2T368A9/PC
View DetailsN-Channel MOSFET Transistor An10N70S10
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions