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High-Power DMOS Transistors 2P7242A-4 for Hybrid Integrated Circuits

High-Power Transistors

Manufacturer: NPP Iskra OJSC

Price: Request Quote

Bulk pricing available

FOB, CIF & EXW terms available

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Description

Boxless high-power silicon planar field diodes with n-type channel, with rigid leads on crystal holder, intended for operation as part of hybrid integrated circuits (ICs) in modules, microassemblies and blocks of secondary power supplies of special-purpose equipment

Specifications

Maximum allowable DC drain-to-source voltage

600 V

Maximum permissible DC drain current

20 A

Drain-to-source resistance in open state

0.2 ohm

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Shipping Terms

FOB Novorossiysk, Russia CIF Available to major ports worldwide EXW Manufacturer's facility, Russia

Delivery Time

Sea freight: 30-60 days (depending on destination) Air freight: 14-21 days (for urgent orders)

Payment Methods

Letter of Credit (L/C) Wire Transfer (T/T) Escrow Services

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High-Power DMOS Transistors 2P7242A-4 for Hybrid Integrated Circuits

Description

Specifications

Share your requirements for a quick response!