Available for Import
Transistor 2T208G/PC
Manufacturer:
ARSENAL KRZPP OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon epitaxial-planar p-n-p transistors 2T208G/PK are made in metal-glass case KT-1 and are intended for operation in special-purpose equipment.
Specifications
Boundary voltage
30 V
Static current transfer coefficient
20...60
Collector junction capacitance
Built-in memory card slot, support microSD/SDHC/SDXC card (up to 256GB); manual recording/alarm recording
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
LDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz
View DetailsHigh-Power NPN Switching Transistor 2T867A for Special Applications
View DetailsHigh Voltage Bipolar Power Transistors 2T8144BM1
View DetailsContinuous Mode DMOS RF Transistor P - 2P979B, 230MHz
View DetailsHigh-Power GaN Microwave Transistor PP9138A
View DetailsP-N-P Silicon Transistor KT234V9
View DetailsHigh-Power High-Voltage Field Transistor KP829D
View DetailsHigh-Power High-Voltage Field Transistor KP829Zh
View DetailsHigh-Power Special Purpose Field Effect Transistors 2P7152A
View DetailsHigh-Frequency p-n-p Transistor 2T3108A/PK
View DetailsHigh Voltage Powerful N-Channel DMOS Transistors and Modules 2P829B9
View DetailsBipolar Transistor 1NT251 for Switching Devices I93.456.000TU
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions