Available for Import
AnM300SSC12M Power IGBT Module
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM300SSC12M
Specifications
Housing type
MPK-62-2
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
300 A
Configuration type
Single key
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful GaN-based Microwave Transistor PP9170D
View Details
Powerful GaN-based Microwave Transistor PP9139B1
View Details
Transistor Optocoupler Special Purpose 3OT123A9 OSM
View Details
Transistor Optocoupler AOT123A with Local Gold Plating
View Details
High Voltage N-Channel DMOS Transistor KP7154BS
View Details
High-Power NPN Transistors for Special Applications 2T968A-5
View Details
Wave Running Light "Lotoshnik
View Details
Field-effect P-Channel Transistor 2P527A9
View Details
Silicon Epitaxial-Planar Transistor for Radio Engineering KT3187B9
View Details
High-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
View Details
Powerful High-Voltage N-P-N Switching Transistor KT8143F
View Details
Powerful GaN Microwave Transistor for Amplifier Applications PP9170E
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions