Available for Import
Power IGBT Module AnM600SSC12M for High-Efficiency Applications
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM600SSC12M
Specifications
Housing type
MPK-62-2
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
600 A
Configuration type
Single key
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful NPN Switching Transistors for Special Applications 2T856G
View Details
N-Channel MOSFET Transistor AnB12N20
View Details
High-Frequency Impulse Transistors for Special Applications 2T603B/IU
View Details
Silicon Planar Transistor 2T117V OSH for Electronic Devices
View Details
Powerful GaN-based Microwave Transistor PP9170D
View Details
AnDM150CD12M Power Module for Enhanced Performance
View Details
LDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz
View Details
High-Voltage Bipolar Power Transistors 2T8143F1
View Details
High Voltage Silicon Power N-Channel DMOS Transistors and Modules 2P829I9
View Details
High Voltage N-Channel DMOS Transistor KP7154BS
View Details
Powerful IGBT Module AnM450HBE12M for Efficient Energy Control
View Details
Bipolar Transistor 1NT251 for Switching Devices I93.456.000TU
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions