Available for Import
Power IGBT Module AnM600SSC12M for High-Efficiency Applications
Manufacturer:
ANGSTREM OJSC
Price:
Request Quote
Bulk pricing available
FOB, CIF & EXW terms available
Description
Silicon IGBT module AnM600SSC12M
Specifications
Housing type
MPK-62-2
Type of acceptance
QA
Maximum allowable voltage
1200 V
Maximum permissible current
600 A
Configuration type
Single key
Share your requirements for a quick response!
Instant response in 15 minutes
Best wholesale prices guaranteed
Direct from manufacturer
Delivery & Payment
Shipping Terms
Delivery Time
Sea freight: 30-60 days (depending on destination)
Air freight: 14-21 days (for urgent orders)
Payment Methods
Similar Products You May Be Interested In
Powerful GaN-Based Microwave Transistor PP9170B
View DetailsHigh-Power GaN Microwave Transistors PП9136A
View DetailsLDMOS Microwave Transistor for Pulse Operation 2P9116B 1030-1090MHz
View DetailsPowerful Linear LDMOS Transistor KP9171BS
View DetailsPowerful Silicon High Voltage N-Channel DMOS Transistors and Modules 2P829G
View DetailsPower Module AnM200HBB12M for Industrial Applications
View DetailsSpecial Purpose Transistor Optocoupler 3OT127A
View DetailsHigh-Power NPN Switching Transistor 2T867A for Special Applications
View DetailsHigh-Power GaN Microwave Transistor for Amplifier Applications PP9139A1
View DetailsSilicon Epitaxial-Planar N-P-N Transistor 2T368A/PK
View DetailsHigh-Power High-Voltage Field Transistor KP829Zh
View DetailsTransistor Optocoupler AOT110B with Local Gold-Plated Pins
View DetailsVerified Suppliers
All products are sourced directly from authorized Russian manufacturers
Quality Assurance
Products meet international quality standards with proper certification
Global Shipping
Reliable logistics solutions to deliver products to your location
Secure Payments
Multiple secure payment options to facilitate international transactions